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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5130 DESCRIPTION *With TO-220F package *High voltage. *High speed switching APPLICATIONS *For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 400 10 5 10 2 30 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=500V; IE=0 VEB=10V; IC=0 IC=1.5A ; VCE=4V IE=0; VCB=10V;f=1MHz IC=-0.3A ; VCE=12V 10 MIN 400 2SC5130 TYP. MAX UNIT V 0.5 1.3 100 10 30 30 20 V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.5A; IB1=0.15A IB2=-0.3A VCC=200V ,RL=133 1.0 2.0 0.3 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5130 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5130 4 |
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